This new edition of the book Semiconductor Power Devices: Physics, Characteristics, Reliability is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of semiconductor properties, pn-junctions, and the physical principles essential for understanding modern power devices. Readers will find detailed coverage of state-of-the-art diodes, thyristors, MOSFETs, and IGBTs, along with new chapters on SiC and GaN technologies, cooling concepts, packaging, and reliability. The edition also introduces extended content on SiC-specific requirements and a dedicated chapter on cosmic ray failures, offering significant updates compared to previous editions.

This new edition of the book Semiconductor Power Devices is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of the physical principles essential for understanding modern power devices. The complementation of the classical pn-theory regarding high-injection behavior and the description of emitters by H. Schlangenotto is now rounded off, displayed in newly written Sections. For IGBTs, new structures with strong carrier confinement are added. New are special chapters on SiC devices and GaN devices. In the SiC chapter, the bipolar mode of the MOSFET body diode and its reverse recovery is discussed for the first time.

The edition provides extended content offering significant updates compared to previous editions.